cystech electronics corp. spec. no. : c089v8 issued date : 2016.03.18 revised date : page no. : 1/9 MTA025B01V8 cystek product specification dual p-channel enhancement mode mosfet MTA025B01V8 p-ch bv dss -14v -5.0a i d @v gs =-4.5v, t a =25 c -7.1a i d @v gs =-4.5v, t c =25 c v gs =-4.5v, i d =-4.5a 22.8m v gs =-2.5v, i d =-2.2a 30.7m r dson(typ) v gs =-1.8v, i d =-2.2a 49.0m features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTA025B01V8-0-t6-g dfn3 3 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTA025B01V8 dfn3 3 g gate s source d drain pin 1 environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t6 : 3000 pcs / tape & reel,13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c089v8 issued date : 2016.03.18 revised date : page no. : 2/9 MTA025B01V8 cystek product specification absolute maximum ratings (t c =25c, unless otherwise noted) parameter symbol limits unit drain-source breakdown voltage bv dss -14 gate-source voltage v gs 2 8 v t a =25 c, v gs =-4.5v -5 continuous drain current *2 t a =70 c, v gs =-4.5v i dsm -4 t c =25 c, v gs =-4.5v -7.1 continuous drain current t c =70 c, v gs =-4.5v i d -5.7 pulsed drain current * 1 i dm -40 a t a =25 c, single device operation 1.5 *2 t a =70 c, single device operation 0.96 *2 t a =25 c, single device value at dual operation 1.24 *2 t a =70 c, single device value at dual operation p dsm 0.79 *2 t c =25 c 2.8 total power dissipation t c =100 c p d 1.1 w operating junction and storage temp erature range tj; tstg -55~+150 c thermal data parameter symbol value unit max. thermal resistance, junction-to-ambient, single device operation 84 *2 max. thermal resistance, junction-to-amb ient, single device value at dual operation r th,j-a 101 *2 max. thermal resistance, junction-to-case r th,j-c 40 c/w note : 1. pulse width limited by maximum junction temperature. 2. surface mounted on a 1 in2 pad of 2oz copper, t 5s. in practice r th,j-a will be determined by customer?s pcb characteristics. 216 c/w when mounted on a minimum pad of 2 oz. copper. electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -14 - - v gs =0v, i d =-250 a v gs(th) -0.4 - -1 v v ds =v gs , i d =-250 a i gss - - 100 v gs =8v, v ds =0v - - -100 na v ds =-12v, v gs =0v, tj=25 i dss - - -10 a v ds =-12v, v gs =0v, tj=55 - 22.8 31.0 v gs =-4.5vv, i d =-4.5a - 30.7 41.5 v gs =-2.5v, i d =-2.2a *r ds(on) 49.0 66.0 m v gs =-1.8v, i d =-2.2a *g fs - 13 - s v ds =-5v, i d =-5a dynamic ciss - 1088 - coss - 251 - crss - 229 - pf v ds =-10v , v gs =0v , f=1mhz *t d(on) - 13.6 - *t r - 25.6 - *t d(off) - 74.6 - *t f - 66.6 - ns v ds =-10v , i d =-5a , v gs =-4.5v , r g =3
cystech electronics corp. spec. no. : c089v8 issued date : 2016.03.18 revised date : page no. : 3/9 MTA025B01V8 cystek product specification *qg - 14.2 - *qgs - 1.7 - *qgd - 5.1 - nc v ds =-10v , i d =-5a , v gs =-4.5v body diode *v sd - -0.77 -1 v v gs= 0v, i s =-1a *trr - 33.5 - ns *qrr - 7.7 - nc i f =-5a, v gs =0v, di f /dt=100a/ s *pulse test : pulse width d 300 s, duty cycle d 2% recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c089v8 issued date : 2016.03.18 revised date : page no. : 4/9 MTA025B01V8 cystek product specification typical characteristics : typical output characteristics 0 5 10 15 20 25 30 35 40 012345 -v ds , drain-source voltage(v) -i d , drain current (a) -v gs =1.5 v 2 v 10v,9v,8v,7v,6v,5v,4v 2.5v 3v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-1.8v v gs =-2.5v v gs =-4.5v v gs =-1.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 012345678 -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =-4.5a drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =-4.5v, i d =-4.5a r dson @tj=25c: 22.8m typ. v gs =-2.5v, i d =-2.2a r dson @tj=25c : 30.7m typ.
cystech electronics corp. spec. no. : c089v8 issued date : 2016.03.18 revised date : page no. : 5/9 MTA025B01V8 cystek product specification typical characteristics(cont.) : capacitance vs drain-to-source voltage 100 1000 10000 012345678910 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance-(s) pulsed ta=25c v ds =-10v v ds =-5v gate charge characteristics 0 2 4 6 8 10 0 6 12 18 24 30 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-5a v ds =-10v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s t a =25c, tj=150c r ja =84c/w, v gs =-4.5v single pulse 1s r ds( on) limited maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) v gs =-4.5v, r ja =84c/w
cystech electronics corp. spec. no. : c089v8 issued date : 2016.03.18 revised date : page no. : 6/9 MTA025B01V8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 5 10 15 20 25 30 35 40 012345 -v gs , gate-source voltage(v) -i d , drain current(a) v ds =-5v single pulse maximum power dissipation 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) peak transient power (w) t j(max) =150c t a =25c r ja =84c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =84 c/w
cystech electronics corp. spec. no. : c089v8 issued date : 2016.03.18 revised date : page no. : 7/9 MTA025B01V8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c089v8 issued date : 2016.03.18 revised date : page no. : 8/9 MTA025B01V8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c089v8 issued date : 2016.03.18 revised date : page no. : 9/9 MTA025B01V8 cystek product specification dfn3 3 dimension millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.650 0.850 0.026 0.033 b 0.200 0.400 0.008 0.016 a1 0.152 ref 0.006 ref e 0.550 0.750 0.022 0.030 a2 0.000 0.050 0.000 0.002 l 0.300 0.500 0.012 0.020 d 2.900 3.100 0.114 0.122 l1 0.180 0.480 0.007 0.019 d1 0.935 1.135 0.037 0.045 l2 0.000 0.100 0.000 0.004 d2 0.280 0.480 0.011 0.019 l3 0.000 0.100 0.000 0.004 e 2.900 3.100 0.114 0.122 h 0.315 0.515 0.012 0.020 e1 3.150 3.450 0.124 0.136 9 13 9 13 e2 1.535 1.935 0.060 0.076 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 8-lead dfn3 3 plastic package cystek package code: v8 date code s1 g1 s2 g2 d1 d1 d2 d2 a025 b01
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